APT50GT120B2RG, IGBT Transistors IGBT NPT Medium Frequency Single 1200 V 50 A TO-247 MAX

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Номенклатурный номер: 8004670900

Артикул: APT50GT120B2RG

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

IGBT NPT 1200V 94A 625W Through Hole

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	3.2 V
Configuration:	Single
Continuous Collector Current at 25 C:	94 A
Factory Pack Quantity: Factory Pack Quantity:	1
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Packaging:	Tube
Pd - Power Dissipation:	625 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Base Product Number	APT50GT120 ->
Current - Collector (Ic) (Max)	94A
Current - Collector Pulsed (Icm)	150A
ECCN	EAR99
Gate Charge	340nC
HTSUS	8541.29.0095
IGBT Type	NPT
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	625W
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Series	Thunderbolt IGBTВ® ->
Switching Energy	2330ВµJ (off)
Td (on/off) @ 25В°C	24ns/230ns
Test Condition	800V, 50A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)	1200V
Вес, г	1