Главная › Электронные компоненты › Транзисторы › Биполярные с изолированным затвором (IGBTs) › ST Microelectronics › STGP6M65DF2, IGBT Transistors Trench gate ...

STGP6M65DF2, IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss

Изображения служат только для ознакомления,
см. техническую документацию

2994 шт., срок 6-8 недель

400 руб.

от 10 шт. — 310 руб.

от 100 шт. — 226 руб.

от 500 шт. — 179.16 руб.

Добавить в корзину 1 шт. на сумму 400 руб.

Альтернативные предложения1

Номенклатурный номер: 8004673220

Артикул: STGP6M65DF2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Configuration:	Single
Continuous Collector Current at 25 C:	12 A
Continuous Collector Current Ic Max:	12 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	+/-250 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	88 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGP6M65DF2
Subcategory:	IGBTs
Technology:	Si
Вес, г	1.8