GT50JR21(STA1,E,S), IGBT Transistors Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ

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50 шт., срок 7-9 недель

1 420 руб.

Добавить в корзину 1 шт. на сумму 1 420 руб.

Номенклатурный номер: 8004726758

Артикул: GT50JR21(STA1,E,S)

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Brand:	Toshiba
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.45 V
Configuration:	Single
Continuous Collector Current at 25 C:	50 A
Continuous Collector Current Ic Max:	100 A
Factory Pack Quantity: Factory Pack Quantity:	25
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Toshiba
Maximum Gate Emitter Voltage:	-25 V, +25 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-3PN-3
Packaging:	Tube
Pd - Power Dissipation:	230 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	GT50JR21
Subcategory:	IGBTs
Technology:	Si
Вес, г	4.6