BFU760F,115, RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\RF Transistors
BFU7xxF Microwave TransistorsNXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14 dB at 12 GHz and noise figure = 1.45 dB at 12 GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32 dBm at 1.8 GHz. BFU790F Microwave Transistors feature high maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth.
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Технические параметры
| Brand: | NXP Semiconductors |
| Collector- Emitter Voltage VCEO Max: | 2.8 V |
| Continuous Collector Current: | 70 mA |
| DC Collector/Base Gain hfe Min: | 155 |
| Emitter- Base Voltage VEBO: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Manufacturer: | NXP |
| Mounting Style: | SMD/SMT |
| Operating Frequency: | 45 GHz |
| Package / Case: | SOT-343 |
| Part # Aliases: | 934064615115 |
| Pd - Power Dissipation: | 220 mW |
| Product Category: | RF Bipolar Transistors |
| Product Type: | RF Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | SiGe |
| Transistor Type: | Bipolar |
| Type: | RF Silicon Germanium |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.75 |
| Type | NPN |
| Material | SiGe |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 10 |
| Maximum Collector-Emitter Voltage (V) | 2.8 |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Maximum Emitter Base Voltage (V) | 1 |
| Maximum DC Collector Current (A) | 0.07 |
| Maximum DC Collector Current Range (A) | 0.06 to 0.12 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Operational Bias Conditions | 2.5V/50mA |
| Minimum DC Current Gain | 155@10mA@2V |
| Minimum DC Current Gain Range | 120 to 200 |
| Typical Input Capacitance (pF) | 1.045 |
| Typical Output Capacitance (pF) | 0.175 |
| Maximum Power Dissipation (mW) | 220 |
| Maximum Power 1dB Compression (dBm) | 18.5(Typ) |
| Typical Power Gain (dB) | 25.5 |
| Maximum 3rd Order Intercept Point (dBm) | 33(Typ) |
| Maximum Transition Frequency (MHz) | 45000(Typ) |
| Maximum Noise Figure (dB) | 0.75(Typ) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | DFP |
| Pin Count | 4 |
| Supplier Package | DFP |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Length | 2.2(Max) |
| Package Width | 1.35(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 111 КБ
Datasheet BFU760F,115
pdf, 117 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
