2N6292G, Bipolar Transistors - BJT 7A 70V 40W NPN
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
The ON Semiconductor 2N6292 is the devices are designed for use in general−purpose amplifier and switching applications.
Технические параметры
Brand: | onsemi |
Collector- Base Voltage VCBO: | 80 V |
Collector- Emitter Voltage VCEO Max: | 70 V |
Collector-Emitter Saturation Voltage: | 3.5 V |
Configuration: | Single |
Continuous Collector Current: | 7 A |
DC Collector/Base Gain hfe Min: | 30 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Gain Bandwidth Product fT: | 4 MHz |
Manufacturer: | onsemi |
Maximum DC Collector Current: | 7 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 40 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
REACH - SVHC: | Details |
Series: | 2N6292 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Maximum Collector Base Voltage | 80 V |
Maximum Collector Emitter Voltage | 70 V |
Maximum DC Collector Current | 7 A |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 1 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 40 W |
Minimum DC Current Gain | 30 |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220AB |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Вес, г | 6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов