NTTFS6H860NLTAG, MOSFET Single N-Channel Power MOSFET 80V, 30A, 20m?ohm
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trench8 MOSFETsonsemi Trench8 MOSFETs feature low maximum ON-resistance (R DS(ON ), ultra-low gate charge (Q g ), and low (Q g ) x R DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q g and Q oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).
Технические параметры
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | WDFN-8 |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 198 КБ
