APT100GLQ65JU3, IGBT Modules CC0107
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 165 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 150 nA |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 430 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | ISOTOP |
| Вес, г | 30 |
