APT100GN60LDQ4G, IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 100 A TO-264

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4 180 руб.

от 10 шт. — 3 970 руб.

от 25 шт. — 3 550 руб.

от 100 шт. — 2 912.58 руб.

Добавить в корзину 1 шт. на сумму 4 180 руб.

Номенклатурный номер: 8004809292

Артикул: APT100GN60LDQ4G

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.45 V
Configuration:	Single
Continuous Collector Current at 25 C:	229 A
Continuous Collector Current Ic Max:	229 A
Continuous Collector Current:	229 A
Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	600 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+175 C
Package/Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	625 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	11

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