APT29F100B2, MOSFET FREDFET MOS8 1000 V 29 A TO-247 MAX
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trans MOSFET N-CH Si 1KV 30A 3-Pin(3+Tab) T-MAX Tube
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Fall Time: | 33 ns |
| Forward Transconductance - Min: | 34 S |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | T-MAX-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.04 kW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 260 nC |
| Rds On - Drain-Source Resistance: | 440 mOhms |
| Rise Time: | 35 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 130 ns |
| Typical Turn-On Delay Time: | 39 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Drain Source Resistance (mOhm) | 440@10V |
| Maximum Drain Source Voltage (V) | 1000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1040000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | T-MAX |
| Supplier Package | T-MAX |
| Tab | Tab |
| Typical Fall Time (ns) | 33 |
| Typical Gate Charge @ 10V (nC) | 260 |
| Typical Gate Charge @ Vgs (nC) | 260@10V |
| Typical Input Capacitance @ Vds (pF) | 8500@25V |
| Typical Rise Time (ns) | 35 |
| Typical Turn-Off Delay Time (ns) | 130 |
| Typical Turn-On Delay Time (ns) | 39 |
| Вес, г | 6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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