APT47N60SC3G, MOSFET MOSFET COOLMOS 600 V 47 A TO-268

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3 840 руб.

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Номенклатурный номер: 8004809446

Артикул: APT47N60SC3G

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

N-канал 600V 47A (Tc) 417W (Tc) Поверхностный монтаж D3 [S]

Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Fall Time:	8 ns
Id - Continuous Drain Current:	47 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D3PAK-3
Packaging:	Tube
Pd - Power Dissipation:	417 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	260 nC
Rds On - Drain-Source Resistance:	70 mOhms
Rise Time:	27 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	18 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Base Product Number	APT47N60 ->
Current - Continuous Drain (Id) @ 25В°C	47A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	7015pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-268-3, DВіPak (2 Leads + Tab), TO-268AA
Power Dissipation (Max)	417W (Tc)
Rds On (Max) @ Id, Vgs	70mOhm @ 30A, 10V
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Series	CoolMOSв„ў ->
Supplier Device Package	D3 [S]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3.9V @ 2.7mA
Вес, г	6.2