APTGT30H60T1G, IGBT Modules DOR CC8008
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
IGBT Power Modules Microchip IGBT Power Modules are a full range of IGBT power modules with different Trench and Field Stop generation offering optimized switching and conduction losses performance. Power module part numbers identify the type of IGBT employed. The Trench5 IGBT family complements Micochip's IGBT power module product offering and is the perfect replacement part for NPT IGBTs. Microchip SiC discrete and module products can be considered as alternative solutions for applications requiring switching frequencies above 20kHz.
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Configuration: | Full Bridge |
| Continuous Collector Current at 25 C: | 50 A |
| Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 300 nA |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +100 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | SP1-12 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 90 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 80 |
Техническая документация
Datasheet
pdf, 445 КБ
