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MJE3055T, Bipolar Transistors - BJT NPN Gen Pur Switch

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6460 шт., срок 7-9 недель

310 руб.

от 10 шт. — 240 руб.

от 100 шт. — 177 руб.

от 500 шт. — 140.59 руб.

Добавить в корзину 1 шт. на сумму 310 руб.

Альтернативные предложения4

Номенклатурный номер: 8004826875

Артикул: MJE3055T

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: NPN, биполярный, 70В, 10А, 90Вт, TO220AB Характеристики

Категория	Транзистор
Тип	биполярный
Вид	NPN

Технические параметры

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	70 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	1.1 V
Configuration:	Single
Continuous Collector Current:	10 A
DC Collector/Base Gain hfe Min:	20
DC Current Gain hFE Max:	70
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	2 MHz
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	10 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	75 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	MJE3055T
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
кол-во в упаковке	50
Brand	STMicroelectronics
Collector- Base Voltage VCBO	70 V
Collector- Emitter Voltage VCEO Max	60 V
Collector-Emitter Saturation Voltage	1.1 V
Configuration	Single
Continuous Collector Current	10 A
DC Collector/Base Gain hfe Min	20
DC Current Gain hFE Max	70
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	2 MHz
Height	9.15 mm(Max)
Length	10.4 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	10 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	75 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	500V Transistors
Transistor Polarity	NPN
Unit Weight	0.211644 oz
Width	4.6 mm(Max)
Maximum Collector Base Voltage	70 V
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	2 MHz
Maximum Power Dissipation	75 W
Minimum DC Current Gain	20
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	6