STGF5H60DF, IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5µs minimum short circuit withstand time at T J =150°C, minimal collector current turn off tail, and very low saturation voltage (V CE(sat) ) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V CE(sat ) temperature coefficient and very tight parameter distribution result in safer paralleling operation.