STGF6M65DF2, IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1599 шт., срок 6-8 недель
360 руб.
от 10 шт. —
280 руб.
от 100 шт. —
203 руб.
от 500 шт. —
160.92 руб.
Добавить в корзину 1 шт.
на сумму 360 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
STM 650V M Series Trench Gate Field-Stop IGBTsSTMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 12 A |
| Continuous Collector Current Ic Max: | 12 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gate-Emitter Leakage Current: | +/-250 uA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220FP-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 24.2 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGF6M65DF2 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Base Product Number | STGF6 -> |
| Current - Collector (Ic) (Max) | 12A |
| Current - Collector Pulsed (Icm) | 24A |
| ECCN | EAR99 |
| Gate Charge | 21.2nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power - Max | 24.2W |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 140ns |
| RoHS Status | ROHS3 Compliant |
| Series | M -> |
| Supplier Device Package | TO-220FP |
| Switching Energy | 36ВµJ (on), 200ВµJ (off) |
| Td (on/off) @ 25В°C | 15ns/90ns |
| Test Condition | 400V, 6A, 22Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 796 КБ
Datasheet STGF6M65DF2
pdf, 961 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
