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STGFW40H65FB, IGBT Transistors Trench gate field-stop 650 V, 40 A high speed HB series IGBT

311 шт., срок 7-9 недель

990 руб.

от 10 шт. — 780 руб.

от 25 шт. — 701 руб.

от 100 шт. — 561.34 руб.

Добавить в корзину 1 шт. на сумму 990 руб.

Номенклатурный номер: 8004828541

Артикул: STGFW40H65FB

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

HB/HB2 Series Insulated-Gate Bipolar Transistors STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	300
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-3PF
Pd - Power Dissipation:	62.5 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	7