STGP15H60DF, IGBT Transistors Trench gate H series 600V 15A HiSpd

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1241 шт., срок 6-8 недель

620 руб.

от 10 шт. — 470 руб.

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Добавить в корзину 1 шт. на сумму 620 руб.

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Номенклатурный номер: 8004828573

Артикул: STGP15H60DF

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

115W 30A 600V FS(Field Stop) TO-220-3 IGBTs ROHS

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	30 A
Continuous Collector Current Ic Max:	15 A
Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	115 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Collector Current (Ic)	30A
Collector-Emitter Breakdown Voltage (Vces)	600V
Diode Reverse Recovery Time (Trr)	103ns
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2V@15V, 15A
Input Capacitance (Cies@Vce)	-
Operating Temperature	-55℃~+175℃@(Tj)
Power Dissipation (Pd)	115W
Pulsed Collector Current (Icm)	60A
Total Gate Charge (Qg@Ic,Vge)	81nC
Turn?off Delay Time (Td(off))	118ns
Turn?off Switching Loss (Eoff)	0.207mJ
Turn?on Delay Time (Td(on))	24.5ns
Turn?on Switching Loss (Eon)	0.136mJ
Type	FS(Field Stop)
Вес, г	6