STGW20NC60V, IGBT Transistors N-Ch 600 Volt 30 Amp

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595 шт., срок 6-8 недель

720 руб.

от 10 шт. — 680 руб.

от 25 шт. — 613 руб.

от 100 шт. — 534.72 руб.

Добавить в корзину 1 шт. на сумму 720 руб.

Номенклатурный номер: 8004828598

Артикул: STGW20NC60V

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	60 A
Continuous Collector Current Ic Max:	60 A
Continuous Collector Current:	30 A
Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	+/-100 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	200 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
Technology	PowerMESH
Channel Type	N
Configuration	Single
Maximum Collector-Emitter Voltage (V)	600
Maximum Gate Emitter Voltage (V)	±20
Typical Collector Emitter Saturation Voltage (V)	1.8
Maximum Continuous Collector Current (A)	60
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	200000
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tube
Automotive	No
Standard Package Name	TO-247
Pin Count	3
Supplier Package	TO-247
Military	No
Mounting	Through Hole
Package Height	20.15(Max)
Package Length	15.75(Max)
Package Width	5.15(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole
Вес, г	39