STGW20NC60VD, IGBT Transistors N-Ch 600 Volt 30 Amp
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см. техническую документацию
см. техническую документацию
1368 шт., срок 6-8 недель
770 руб.
от 10 шт. —
720 руб.
от 25 шт. —
650 руб.
от 100 шт. —
532.22 руб.
Добавить в корзину 1 шт.
на сумму 770 руб.
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Описание Транзистор N-МОП, полевой, 600В 30A 200Вт TO247 Характеристики | Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 60 A |
| Continuous Collector Current Ic Max: | 60 A |
| Continuous Collector Current: | 30 A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | +/-100 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 200 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGW20NC60VD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 60 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 60 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Collector Emitter Saturation Voltage (V) | 1.8 |
| Brand | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current | 30 A |
| Continuous Collector Current at 25 C | 60 A |
| Continuous Collector Current Ic Max | 60 A |
| Factory Pack Quantity | 600 |
| Gate-Emitter Leakage Current | +/-100 nA |
| Height | 20.15 mm |
| Length | 15.75 mm |
| Manufacturer | STMicroelectronics |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Pd - Power Dissipation | 200 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | 600-650V IGBTs |
| Technology | Si |
| Width | 5.15 mm |
| Вес, г | 39 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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