STGW20V60DF, IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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600 шт., срок 6-8 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
IGBT V SeriesSTMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 2.3 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 167 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGW20V60DF |
| Subcategory: | IGBTs |
| Technology: | Si |
| Base Product Number | STGW20 -> |
| Current - Collector (Ic) (Max) | 40A |
| Current - Collector Pulsed (Icm) | 80A |
| ECCN | EAR99 |
| Gate Charge | 116nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 167W |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 40ns |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-247 |
| Switching Energy | 200ВµJ (on), 130ВµJ (off) |
| Td (on/off) @ 25В°C | 38ns/149ns |
| Test Condition | 400V, 20A, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Collector Emitter Saturation Voltage | 1.8В |
| Collector Emitter Voltage Max | 600В |
| Continuous Collector Current | 40А |
| Power Dissipation | 167Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | V |
| Максимальная Рабочая Температура | 175 C |
| Стиль Корпуса Транзистора | TO-247 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 40 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 167 W |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Вес, г | 6.5 |
Техническая документация
Datasheet
pdf, 2084 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 2086 КБ
Datasheet STGW20V60DF
pdf, 2064 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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