STGW30M65DF2, IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
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2902 шт., срок 6-8 недель
970 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
STM 650V M Series Trench Gate Field-Stop IGBTsSTMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 60 A |
| Continuous Collector Current Ic Max: | 60 A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | +/-250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 258 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGW30M65DF2 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Base Product Number | STGW30 -> |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| ECCN | EAR99 |
| Gate Charge | 80nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 258W |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 140ns |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-247 |
| Switching Energy | 300ВµJ (on), 960ВµJ (off) |
| Td (on/off) @ 25В°C | 31.6ns/115ns |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Automotive | No |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Lead Shape | Through Hole |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 60 |
| Maximum Gate Emitter Leakage Current (uA) | 250 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 258 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Technology | Field Stop|Trench |
| Typical Collector Emitter Saturation Voltage (V) | 1.55 |
| Вес, г | 4.43 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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