STGW40H120F2, IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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600 шт., срок 6-8 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Latest Technologies in Power MOSFET and IGBT STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 468 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Base Product Number | STGW40 -> |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 160A |
| ECCN | EAR99 |
| Gate Charge | 158nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 468W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-247 |
| Switching Energy | 1mJ (on), 1.32mJ (off) |
| Td (on/off) @ 25В°C | 18ns/152ns |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 38 |
Техническая документация
Datasheet
pdf, 979 КБ
Datasheet STGW40H120F2
pdf, 995 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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