STGWA25M120DF3, IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
373 шт., срок 7-9 недель
1 640 руб.
от 10 шт. —
1 380 руб.
от 25 шт. —
1 170 руб.
от 100 шт. —
930.65 руб.
Добавить в корзину 1 шт.
на сумму 1 640 руб.
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
M Series 1200V Trench Gate Field-Stop IGBTs STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 1.85 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 50 A |
Continuous Collector Current Ic Max: | 25 A |
Factory Pack Quantity: | 600 |
Gate-Emitter Leakage Current: | 250 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 375 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Base Product Number | STGWA25 -> |
Current - Collector (Ic) (Max) | 50A |
Current - Collector Pulsed (Icm) | 100A |
ECCN | EAR99 |
Gate Charge | 85nC |
HTSUS | 8541.29.0095 |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-247-3 |
Power - Max | 375W |
REACH Status | REACH Unaffected |
Reverse Recovery Time (trr) | 265ns |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-247 Long Leads |
Switching Energy | 850ВµJ (on), 1.3mJ (off) |
Td (on/off) @ 25В°C | 28ns/150ns |
Test Condition | 600V, 25A, 15Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Вес, г | 38 |
Техническая документация
Datasheet
pdf, 496 КБ
Datasheet STGWA25M120DF3
pdf, 664 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
Похожие товары