STGWA25M120DF3, IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

STGWA25M120DF3, IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
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373 шт., срок 7-9 недель
1 640 руб.
от 10 шт.1 380 руб.
от 25 шт.1 170 руб.
от 100 шт.930.65 руб.
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Альтернативные предложения2
Номенклатурный номер: 8004828634
Артикул: STGWA25M120DF3
Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
M Series 1200V Trench Gate Field-Stop IGBTs STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

Технические параметры

Brand: STMicroelectronics
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Configuration: Single
Continuous Collector Current at 25 C: 50 A
Continuous Collector Current Ic Max: 25 A
Factory Pack Quantity: 600
Gate-Emitter Leakage Current: 250 nA
Manufacturer: STMicroelectronics
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package/Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 375 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si
Base Product Number STGWA25 ->
Current - Collector (Ic) (Max) 50A
Current - Collector Pulsed (Icm) 100A
ECCN EAR99
Gate Charge 85nC
HTSUS 8541.29.0095
IGBT Type Trench Field Stop
Input Type Standard
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55В°C ~ 175В°C (TJ)
Package Tube
Package / Case TO-247-3
Power - Max 375W
REACH Status REACH Unaffected
Reverse Recovery Time (trr) 265ns
RoHS Status ROHS3 Compliant
Supplier Device Package TO-247 Long Leads
Switching Energy 850ВµJ (on), 1.3mJ (off)
Td (on/off) @ 25В°C 28ns/150ns
Test Condition 600V, 25A, 15Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max) 1200V
Вес, г 38

Техническая документация

Datasheet
pdf, 496 КБ
Datasheet STGWA25M120DF3
pdf, 664 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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