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STGWA30HP65FB2, IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT

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570 шт., срок 7-9 недель

870 руб.

от 10 шт. — 810 руб.

от 25 шт. — 636 руб.

от 100 шт. — 492.41 руб.

Добавить в корзину 1 шт. на сумму 870 руб.

Альтернативные предложения1

Номенклатурный номер: 8004828637

Артикул: STGWA30HP65FB2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

HB/HB2 Series Insulated-Gate Bipolar Transistors STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	50 A
Continuous Collector Current Ic Max:	50 A
Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	167 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Base Product Number	STGWA30 ->
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	90A
ECCN	EAR99
Gate Charge	90nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	167W
REACH Status	REACH Unaffected
Reverse Recovery Time (trr)	140ns
RoHS Status	ROHS3 Compliant
Series	HB2 ->
Supplier Device Package	TO-247 Long Leads
Td (on/off) @ 25В°C	-/71ns
Test Condition	400V, 30A, 6.8Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)	650V
Вес, г	7