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STGWA50M65DF2, IGBT Transistors Trench gate field-stop IGBT M series, 650 V 50 A low loss

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560 шт., срок 7-9 недель

1 550 руб.

от 10 шт. — 1 210 руб.

от 25 шт. — 1 110 руб.

от 100 шт. — 881.41 руб.

Добавить в корзину 1 шт. на сумму 1 550 руб.

Альтернативные предложения1

Номенклатурный номер: 8004828644

Артикул: STGWA50M65DF2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

650V IH Series IGBTs
STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V CE(sat) combined with very low turn-off energy. There are 40A and 50A devices already available in TO-247 Long Leads packages, 20A, and 30A devices are in development.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	+/-250 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	375 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	HB2
Subcategory:	IGBTs
Technology:	Si
Вес, г	6