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STGWT80H65DFB, IGBT Transistors Trench gate H series 650V 80A HiSpd

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267 шт., срок 7-9 недель

1 800 руб.

от 10 шт. — 1 680 руб.

Добавить в корзину 1 шт. на сумму 1 800 руб.

Номенклатурный номер: 8004828660

Артикул: STGWT80H65DFB

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

HB/HB2 Series Insulated-Gate Bipolar Transistors
STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	120 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	300
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, +20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-3P
Packaging:	Tube
Pd - Power Dissipation:	469 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGWT80H65DFB
Subcategory:	IGBTs
Technology:	Si
Channel Type	N
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	120 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	469 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-3P
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Вес, г	5.6