HGTD1N120BNS9A
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Описание
Электроэлемент
IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3; DC Collector Current:5.3A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-252AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
Base Part Number | HGTD1N120 |
Current - Collector (Ic) (Max) | 5.3A |
Current - Collector Pulsed (Icm) | 6A |
Gate Charge | 14nC |
IGBT Type | NPT |
Input Type | Standard |
Manufacturer | ON Semiconductor |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power - Max | 60W |
Series | - |
Supplier Device Package | TO-252AA |
Switching Energy | 70ВµJ(on), 90ВµJ(off) |
Td (on/off) @ 25В°C | 15ns/67ns |
Test Condition | 960V, 1A, 82Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Brand: | onsemi/Fairchild |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.5 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 5.3 A |
Continuous Collector Current Ic Max: | 5.3 A |
Continuous Collector Current: | 5.3 A |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Gate-Emitter Leakage Current: | +/-250 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-3 |
Pd - Power Dissipation: | 60 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | HGTD1N120BNS |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 0.26 |
Техническая документация
Datasheet
pdf, 216 КБ
Документация
pdf, 217 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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