SSM2212CPZ-R7, Bipolar Transistors - BJT Audio Dual Matched NPN Transistor
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
SSM2212 Dual-Matched NPN TransistorAnalog Devices SSM2212 Dual-Matched NPN Transistors are dual, NPN-matched transistor pairs specifically designed to meet the requirements of ultra-low noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.
Технические параметры
| Brand: | Analog Devices |
| Collector- Base Voltage VCBO: | 40 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 50 mV |
| Configuration: | Dual |
| DC Collector/Base Gain hfe Min: | 300 at 1 mA, 15 V, 300 at 1 mA, 15 V |
| DC Current Gain hFE Max: | 2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Gain Bandwidth Product fT: | 200 MHz |
| Manufacturer: | Analog Devices Inc. |
| Maximum DC Collector Current: | 20 mA |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Package / Case: | LFCSP-16 |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | SSM2212 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 373 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
