2N7002 TR PBFREE, MOSFET N-Ch 60V .2A

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366646 шт., срок 7-9 недель

67 руб.

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Альтернативные предложения1

Номенклатурный номер: 8005049665

Артикул: 2N7002 TR PBFREE

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

N-канал 60 В 115 мА (Tc) 350 мВт (Ta) SOT-23 для поверхностного монтажа

Brand:	Central Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	300 mA
Manufacturer:	Central Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	600 pC
Rds On - Drain-Source Resistance:	3.7 Ohms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Current - Continuous Drain (Id) @ 25В°C	115mA (Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
ECCN	EAR99
FET Type	N-Channel
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	350mW (Ta)
Rds On (Max) @ Id, Vgs	7.5Ohm @ 500mA, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	40V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Вес, г	0.01