DF80R12W2H3F_B11, IGBT Modules LOW POWER EASY
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
18 120 руб.
Добавить в корзину 1 шт.
на сумму 18 120 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
1200V CoolSiC™ ModulesInfineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 20 A |
| Factory Pack Quantity: Factory Pack Quantity: | 15 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Press Fit |
| Package / Case: | Module |
| Packaging: | Tray |
| Part # Aliases: | SP001602664 DF80R12W2H3FB11BPSA1 |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Carbide Modules |
| Series: | High Speed IGBT H3 |
| Subcategory: | IGBTs |
| Technology: | SiC |
| Tradename: | EasyPACK |
| Вес, г | 73.26 |
Техническая документация
Datasheet
pdf, 849 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Похожие товары
