FP75R12KE3, IGBT Modules 1200V 75A PIM
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см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Биполярный транзистор IGBT, 1200 В, 75 A, 355Вт
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 105 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | EconoPIM3 |
| Packaging: | Tray |
| Part # Aliases: | SP000100415 FP75R12KE3BOSA1 |
| Pd - Power Dissipation: | 355 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | IGBT3-E3 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | EconoPIM |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 2.15 V |
| Configuration | Hex |
| Continuous Collector Current at 25 C | 105 A |
| Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Height | 17 mm |
| Length | 122 mm |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw |
| Package / Case | EconoPIM3 |
| Part # Aliases | FP75R12KE3BOSA1 |
| Pd - Power Dissipation | 350 W |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| RoHS | No |
| Unit Weight | 6.349313 oz |
| Width | 62 mm |
| Вес, г | 300 |
Техническая документация
Datasheet
pdf, 503 КБ
Дополнительная информация
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