IFS100B12N3E4_B31, IGBT Modules MIPAQ BASE 1200V 100A

IFS100B12N3E4_B31, IGBT Modules MIPAQ BASE 1200V 100A
Изображения служат только для ознакомления,
см. техническую документацию
56 940 руб.
от 10 шт.49 330 руб.
от 20 шт.48 740 руб.
Добавить в корзину 1 шт. на сумму 56 940 руб.
Номенклатурный номер: 8005074045
Артикул: IFS100B12N3E4_B31

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
MIPAQ™ Intelligent Power Modules Infineon MIPAQ™ Intelligent Power Modules integrate electronics into power modules and is a functional product category within the IGBT modules portfolio. These power modules combine IGBT modules, integrated sensing, and driving electronics. The MIPAQ power modules offer powerful and compact inverters for low and medium power. The power modules are cost-effective and contribute to energy saving.

Технические параметры

Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Configuration: 6-Pack
Continuous Collector Current at 25 C: 100 A
Factory Pack Quantity: 10
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Packaging: Tray
Part # Aliases: SP000643756 IFS100B12N3E4B31BOSA1
Pd - Power Dissipation: 515 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Subcategory: IGBTs
Вес, г 300

Техническая документация

Datasheet
pdf, 650 КБ

Дополнительная информация

Калькуляторы группы «IGBT модули»