BSZ009NE2LS5ATMA1, MOSFET TRENCH = 40V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
USB-C Chargers & Adapters Infineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 70 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSDSON-8 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | BSZ009NE2LS5 SP002103848 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 92 nC |
| Rds On - Drain-Source Resistance: | 960 uOhms |
| Rise Time: | 9 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 31 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 223 A |
| Maximum Drain Source Voltage | 25 V |
| Mounting Type | Surface Mount |
| Package Type | PG-TSDSON |
| Вес, г | 0.04 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Микроконтроллеры»
Типы корпусов импортных микросхем
