2SB1189T100Q, Bipolar Transistors - BJT PNP 80V 0.7A

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622 шт., срок 6-8 недель

190 руб.

от 10 шт. — 160 руб.

от 100 шт. — 100 руб.

от 500 шт. — 75.45 руб.

Добавить в корзину 1 шт. на сумму 190 руб.

Альтернативные предложения1

Номенклатурный номер: 8005258959

Артикул: 2SB1189T100Q

Бренд: Rohm

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Bipolar Transistors - BJT PNP 80V 0.7A

Brand:	ROHM Semiconductor
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Single
Continuous Collector Current:	-700 mA
DC Collector/Base Gain hFE Min:	120
DC Current Gain hFE Max:	120 at 100 mA, 3 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	ROHM Semiconductor
Maximum DC Collector Current:	700 mA
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-89-3
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Brand	ROHM Semiconductor
Collector- Base Voltage VCBO	-80 V
Collector- Emitter Voltage VCEO Max	-80 V
Configuration	Single
Continuous Collector Current	-0.7 A
DC Collector/Base Gain hfe Min	120
DC Current Gain hFE Max	120 at 0.1 A at 3 V
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	120 MHz
Height	1.5 mm
Length	4.5 mm
Manufacturer	ROHM Semiconductor
Maximum DC Collector Current	-0.7 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Packaging	Reel
Pd - Power Dissipation	2 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	2SB1189
Transistor Polarity	PNP
Unit Weight	0.004603 oz
Width	2.5 mm
Вес, г	0.13