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BUK6Y10-30PX, MOSFET BUK6Y10-30P/SOT669/LFPAK

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4100 шт., срок 6-8 недель

350 руб.

от 10 шт. — 270 руб.

от 100 шт. — 197 руб.

от 500 шт. — 155.36 руб.

Добавить в корзину 1 шт. на сумму 350 руб.

Альтернативные предложения2

Номенклатурный номер: 8005274214

Артикул: BUK6Y10-30PX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

LFPAK P-Channel Trench MOSFETs Nexperia LFPAK P-Channel Trench MOSFETs are designed and qualified to AEC-Q101 standards for use in high-performance automotive applications. These MOSFETs feature high thermal power dissipation capability. The P-channel MOSFETs are available in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package. These MOSFETs are suitable for thermally demanding environments due to the 175°C rating. Typical applications include reverse battery protection, power management, high-side load switch, and motor drive.

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1500
Fall Time:	580 ns
Forward Transconductance - Min:	31 S
Id - Continuous Drain Current:	80 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	LFPAK-56-4
Part # Aliases:	934661707115
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	42.5 nC
Rds On - Drain-Source Resistance:	10 mOhms
Rise Time:	38 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Continuous Drain Current (Id)	80A
Drain Source On Resistance (RDS(on)@Vgs,Id)	10mΩ@13.5A, 10V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Input Capacitance (Ciss@Vds)	2.36nF@15V
Operating Temperature	-55℃~+175℃@(Tj)
Power Dissipation (Pd)	110W
Total Gate Charge (Qg@Vgs)	64nC@10V
Type	P Channel
Вес, г	0.09