Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Nexperia › BUK7J1R0-40HX, MOSFET BUK7J1R0-40H/SOT1023/4 LEADS

BUK7J1R0-40HX, MOSFET BUK7J1R0-40H/SOT1023/4 LEADS

Изображения служат только для ознакомления,
см. техническую документацию

3226 шт., срок 6-8 недель

1 030 руб.

от 10 шт. — 810 руб.

от 100 шт. — 586 руб.

от 250 шт. — 571.19 руб.

Добавить в корзину 1 шт. на сумму 1 030 руб.

Альтернативные предложения2

Номенклатурный номер: 8005274248

Артикул: BUK7J1R0-40HX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Trench 9 Superjunction MOSFETs

Nexperia Trench 9 Superjunction MOSFETs combine low voltage superjunction technology with advanced packaging design to deliver high performance and ruggedness. Trench 9 MOSFETs are all qualified to AEC-Q101, and exceed the requirements of this international automotive standard by as much as two times on key reliability tests, including Temperature Cycling (TC), High-Temperature Gate Bias (HTGB), High-Temperature Reverse Bias (HTRB), and Intermittent Operating Life (IOL).

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1500
Id - Continuous Drain Current:	220 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	LFPAK-56E-4
Part # Aliases:	934660371115
Pd - Power Dissipation:	500 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	131 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	1 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Вес, г	75