2SA2016-TD-E, Bipolar Transistors - BJT BIP PNP 7A 50V

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Номенклатурный номер: 8005368311

Артикул: 2SA2016-TD-E

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

50V 3.5W 200@500mA,2V 7A PNP SOT-89-3 Bipolar Transistors - BJT ROHS

Brand:	onsemi
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	240 mV
Configuration:	Single
Continuous Collector Current:	7 A
DC Collector/Base Gain hfe Min:	200
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	330 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	7 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	3.5 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Collector Current (Ic)	7A
Collector Cut-Off Current (Icbo)	100nA
Collector-Emitter Breakdown Voltage (Vceo)	50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	240mV@2A, 40mA
DC Current Gain (hFE@Ic,Vce)	200@500mA, 2V
Operating Temperature	-
Power Dissipation (Pd)	3.5W
Transistor Type	PNP
Transition Frequency (fT)	290MHz
Вес, г	0.142