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NVTR4503NT1G, MOSFET Single N-Channel Power MOSFET 30V, 2.5A, 110mohm Automotive Version of the NTR4503N

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см. техническую документацию

120 руб.

от 10 шт. — 64 руб.

от 100 шт. — 34 руб.

от 1000 шт. — 24.98 руб.

Добавить в корзину 1 шт. на сумму 120 руб.

Альтернативные предложения1

Номенклатурный номер: 8005375958

Артикул: NVTR4503NT1G

Бренд: ON Semiconductor***

Описание

Описание Транзистор: N-MOSFET, полевой, 30В, 1,5А, 0,73Вт, SOT23 Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	2
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	2
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	110 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	300
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	730
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.73
Maximum Pulsed Drain Current @ TC=25°C (A)	10
Minimum Gate Threshold Voltage (V)	1
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	Yes
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Supplier Temperature Grade	Automotive
Typical Diode Forward Voltage (V)	0.85
Typical Fall Time (ns)	1.6\|1.8
Typical Gate Charge @ 10V (nC)	3.6
Typical Gate Charge @ Vgs (nC)	3.6 10V\|1.9 4.5V
Typical Gate Plateau Voltage (V)	2.8
Typical Gate Threshold Voltage (V)	1.75
Typical Gate to Drain Charge (nC)	0.9
Typical Gate to Source Charge (nC)	0.6
Typical Input Capacitance @ Vds (pF)	135 15V\|130 24V
Typical Output Capacitance (pF)	52
Typical Reverse Recovery Charge (nC)	4
Typical Reverse Recovery Time (ns)	9.2
Typical Reverse Transfer Capacitance @ Vds (pF)	15 15V
Typical Rise Time (ns)	5.8\|6.7
Typical Turn-Off Delay Time (ns)	14\|13.6
Typical Turn-On Delay Time (ns)	5.8\|4.8
Maximum Continuous Drain Current	2.5 A
Maximum Drain Source Resistance	140 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	730 mW
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	3.6 nC @ 10 V
Width	1.4mm
Вес, г	0.008