NXH50M65L4Q1SG, IGBT Modules IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode Solder pins
17 800 руб.
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14 550 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Power Integrated Modules (PIMs) onsemi Power Integrated Modules (PIMs) leverage extensive experience in automotive ignition IGBTs and intelligent power module (IPM) development, as well as packaging expertise, to result in power solutions fully qualified to leading industry standards. These onsemi module solutions offer users a fully-integrated supply chain for silicon and packaging, ensuring high quality and cost efficiencies. The Power Integrated Modules have power switches and rectifiers only, provided in various topologies. Common topologies include three-phase inverter stages with input bridge rectification and brakes, boost converters, and multi-level inverters.
Технические параметры
Brand: | onsemi |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.56 V |
Configuration: | Full Bridge |
Continuous Collector Current at 25 C: | 48 A |
Factory Pack Quantity: | 21 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -40 C |
Packaging: | Tray |
Pd - Power Dissipation: | 72 W |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Subcategory: | IGBTs |
Техническая документация
Datasheet
pdf, 561 КБ