NXH50M65L4Q1SG, IGBT Modules IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode Solder pins

17 800 руб.
от 10 шт.14 550 руб.
Добавить в корзину 1 шт. на сумму 17 800 руб.
Номенклатурный номер: 8005375963
Артикул: NXH50M65L4Q1SG

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Power Integrated Modules (PIMs) onsemi Power Integrated Modules (PIMs) leverage extensive experience in automotive ignition IGBTs and intelligent power module (IPM) development, as well as packaging expertise, to result in power solutions fully qualified to leading industry standards. These onsemi module solutions offer users a fully-integrated supply chain for silicon and packaging, ensuring high quality and cost efficiencies. The Power Integrated Modules have power switches and rectifiers only, provided in various topologies. Common topologies include three-phase inverter stages with input bridge rectification and brakes, boost converters, and multi-level inverters.

Технические параметры

Brand: onsemi
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.56 V
Configuration: Full Bridge
Continuous Collector Current at 25 C: 48 A
Factory Pack Quantity: 21
Gate-Emitter Leakage Current: 400 nA
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Packaging: Tray
Pd - Power Dissipation: 72 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Subcategory: IGBTs

Техническая документация

Datasheet
pdf, 561 КБ

Дополнительная информация

Калькуляторы группы «IGBT модули»