TK65E10N1,S1X

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1121 шт., срок 7-9 недель

840 руб.

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Номенклатурный номер: 8005730984

Бренд: Toshiba

Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	50
Fall Time:	26 ns
Id - Continuous Drain Current:	148 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	192 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	81 nC
Rds On - Drain-Source Resistance:	4 mOhms
Rise Time:	19 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	44 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	148
Maximum Drain Source Resistance - (mOhm)	4.8@10V
Maximum Drain Source Voltage - (V)	100
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	4
Maximum Power Dissipation - (mW)	192000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Magazine
Pin Count	3
Process Technology	U-MOS VIII-H
Supplier Package	TO-220
Typical Gate Charge @ 10V - (nC)	81
Typical Gate Charge @ Vgs - (nC)	81@10V
Typical Input Capacitance @ Vds - (pF)	5400@50V