STGWA30HP65FB2

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599 шт., срок 7-9 недель

900 руб.

от 30 шт. — 620 руб.

от 120 шт. — 493 руб.

от 510 шт. — 407.47 руб.

Добавить в корзину 1 шт. на сумму 900 руб.

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Номенклатурный номер: 8005778516

Discrete Semiconductor Products\Transistors - IGBTs - Single

IGBT Trench Field Stop 650V 50A 167W сквозное отверстие TO-247, длинные выводы

Base Product Number	STGWA30 ->
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	90A
ECCN	EAR99
Gate Charge	90nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	167W
REACH Status	REACH Unaffected
Reverse Recovery Time (trr)	140ns
RoHS Status	ROHS3 Compliant
Series	HB2 ->
Supplier Device Package	TO-247 Long Leads
Td (on/off) @ 25В°C	-/71ns
Test Condition	400V, 30A, 6.8Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)	650V
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	50 A
Continuous Collector Current Ic Max:	50 A
Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	167 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si