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STGP30H60DFB

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862 шт., срок 6-8 недель

920 руб.

от 50 шт. — 630 руб.

от 100 шт. — 500 руб.

от 500 шт. — 413.16 руб.

Добавить в корзину 1 шт. на сумму 920 руб.

Альтернативные предложения2

Номенклатурный номер: 8005945939

Бренд: STMicroelectronics

Описание

HB Trench Gate Field-Stop IGBTs
STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.55 V
Configuration:	Single
Continuous Collector Current at 25 C:	60 A
Continuous Collector Current Ic Max:	60 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	+/-250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	260 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGP30H60DFB
Subcategory:	IGBTs
Technology:	Si