C3M0350120D, MOSFET SiC, MOSFET, 350mohm,1200V, TO-247-3, Industrial

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Номенклатурный номер: 8006256553

Артикул: C3M0350120D

Бренд: WOLFSPEED

Trans MOSFET N-CH SiC 1.2KV 7.6A 3-Pin(3+Tab) TO-247

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	SiC
Maximum Continuous Drain Current (A)	7.6
Maximum Drain Source Resistance (mOhm)	455@15V
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Leakage Current (nA)	250
Maximum Gate Source Voltage (V)	15
Maximum Gate Threshold Voltage (V)	3.6
Maximum IDSS (uA)	50
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	15
Maximum Power Dissipation (mW)	50000
Maximum Pulsed Drain Current @ TC=25°C (A)	20
Minimum Gate Threshold Voltage (V)	1.8
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	C3M
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Tab	Tab
Typical Diode Forward Voltage (V)	4.5
Typical Fall Time (ns)	17
Typical Gate Charge @ Vgs (nC)	19@15V
Typical Gate Plateau Voltage (V)	6.8
Typical Gate Threshold Voltage (V)	2.5
Typical Gate to Drain Charge (nC)	9
Typical Gate to Source Charge (nC)	5
Typical Input Capacitance @ Vds (pF)	345@1000V
Typical Output Capacitance (pF)	20
Typical Reverse Recovery Charge (nC)	67
Typical Reverse Recovery Time (ns)	26
Typical Reverse Transfer Capacitance @ Vds (pF)	3.4@1000V
Typical Rise Time (ns)	16
Typical Turn-Off Delay Time (ns)	14
Typical Turn-On Delay Time (ns)	25
Вес, г	1