TEMT1030, Phototransistors Yoke 730 to 1000nm +/-15 deg
260 руб.
от 10 шт. —
140 руб.
от 100 шт. —
92 руб.
Добавить в корзину 1 шт.
на сумму 260 руб.
Описание
Phototransistor, Npn, 950nm Peak Wavelength, 50m, Led-8c
Технические параметры
| Brand | Vishay Semiconductors |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Collector-Emitter Breakdown Voltage | 70 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Dark Current | 200 nA |
| Factory Pack Quantity | 1000 |
| Fall Time | 2.3 us |
| Half Intensity Angle Degrees | 15 deg |
| Height | 2.7 mm |
| Length | 2.5 mm |
| Lens Color/Style | Black |
| Light Current | 7 mA |
| Manufacturer | Vishay |
| Maximum On-State Collector Current | 100 mA |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Operating Supply Voltage | 5 V |
| Package / Case | SMD-2 |
| Packaging | Reel |
| Pd - Power Dissipation | 100 mW |
| Peak Wavelength | 950 nm |
| Product | Phototransistors |
| Product Category | Phototransistors |
| Rise Time | 2 us |
| RoHS | Details |
| Series | TEMT |
| Type | IR Chip |
| Wavelength | 880 nm |
| Width | 2 mm |
Техническая документация
Документация
pdf, 192 КБ
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