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MSC035SMA070B4, MOSFET MOSFET SIC 700 V 35 mOhm TO-247-4

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Номенклатурный номер: 8006408163

Артикул: MSC035SMA070B4

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Технические параметры

Brand:	Microchip Technology/Atmel
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Fall Time:	52 ns
Id - Continuous Drain Current:	77 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	283 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	99 nC
Rds On - Drain-Source Resistance:	44 mOhms
Rise Time:	9 ns
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	700 V
Vgs - Gate-Source Voltage:	-10 V, +23 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Base Product Number	MSC035 ->
Current - Continuous Drain (Id) @ 25В°C	77A (Tc)
Drain to Source Voltage (Vdss)	700V
Drive Voltage (Max Rds On, Min Rds On)	20V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99nC @ 20V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	2010pF @ 700V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-4
Power Dissipation (Max)	283W (Tc)
Rds On (Max) @ Id, Vgs	44mOhm @ 30A, 20V
Supplier Device Package	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+23V, -10V
Vgs(th) (Max) @ Id	2.7V @ 2mA
Вес, г	9