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MSC015SMA070B, MOSFET MOSFET SIC 700 V 15 mOhm TO-247

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Номенклатурный номер: 8004810316

Артикул: MSC015SMA070B

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm 2 to 15J/cm 2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, SiC MOSFET and SiC SBD die can be paired together for use in modules.

Технические параметры

Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Id - Continuous Drain Current:	140 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	400 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	215 nC
Rds On - Drain-Source Resistance:	19 mOhms
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Vgs - Gate-Source Voltage:	-10 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Base Product Number	MSC015 ->
Current - Continuous Drain (Id) @ 25В°C	131A (Tc)
Drain to Source Voltage (Vdss)	700V
Drive Voltage (Max Rds On, Min Rds On)	20V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	215nC @ 20V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 700V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	400W (Tc)
Rds On (Max) @ Id, Vgs	19mOhm @ 40A, 20V
RoHS Status	RoHS Compliant
Supplier Device Package	TO-247-3
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+25V, -10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Вес, г	20