Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Microchip › APT75M50L

APT75M50L

Изображения служат только для ознакомления,
см. техническую документацию

4 220 руб.

Добавить в корзину 1 шт. на сумму 4 220 руб.

Номенклатурный номер: 8006631567

Бренд: Microchip Technology

Описание

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single

N-канал 500 В 75 A (Tc) 1040 Вт (Tc) сквозное отверстие TO-264 [L]

Технические параметры

Base Product Number	APT75M50 ->
Current - Continuous Drain (Id) @ 25В°C	75A (Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	290nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	11600pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-264-3, TO-264AA
Power Dissipation (Max)	1040W (Tc)
Rds On (Max) @ Id, Vgs	75mOhm @ 37A, 10V
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Series	POWER MOS 8в„ў ->
Supplier Device Package	TO-264 [L]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Fall Time:	39 ns
Forward Transconductance - Min:	55 S
Id - Continuous Drain Current:	75 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	1.04 kW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET
Qg - Gate Charge:	290 nC
Rds On - Drain-Source Resistance:	75 mOhms
Rise Time:	55 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Type:	Power MOSFET
Typical Turn-Off Delay Time:	120 ns
Typical Turn-On Delay Time:	45 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	10