MSC080SMA120B

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3 130 руб.

от 25 шт. — 2 430 руб.

Добавить в корзину 1 шт. на сумму 3 130 руб.

Номенклатурный номер: 8012541514

N-канал 1200V 37A (Tc) 200W (Tc) сквозное отверстие TO-247-3

Base Product Number	MSC080 ->
Current - Continuous Drain (Id) @ 25В°C	37A (Tc)
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On, Min Rds On)	20V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64nC @ 20V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	838pF @ 1000V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	200W (Tc)
Rds On (Max) @ Id, Vgs	100mOhm @ 15A, 20V
RoHS Status	RoHS Compliant
Supplier Device Package	TO-247-3
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Id - Continuous Drain Current:	37 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	200 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	64 nC
Rds On - Drain-Source Resistance:	100 mOhms
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-10 V, +23 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V