SSM2212CPZ-R7
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Описание
SSM2212 Dual-Matched NPN Transistor
Analog Devices SSM2212 Dual-Matched NPN Transistors are dual, NPN-matched transistor pairs specifically designed to meet the requirements of ultra-low noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.
Analog Devices SSM2212 Dual-Matched NPN Transistors are dual, NPN-matched transistor pairs specifically designed to meet the requirements of ultra-low noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.
Технические параметры
Brand: | Analog Devices |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 50 mV |
Configuration: | Dual |
DC Collector/Base Gain hfe Min: | 300 at 1 mA, 15 V, 300 at 1 mA, 15 V |
DC Current Gain hFE Max: | 2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V |
Factory Pack Quantity: Factory Pack Quantity: | 1500 |
Gain Bandwidth Product fT: | 200 MHz |
Manufacturer: | Analog Devices Inc. |
Maximum DC Collector Current: | 20 mA |
Maximum Operating Temperature: | +85 C |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Package / Case: | LFCSP-16 |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | SSM2212 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Техническая документация
Datasheet
pdf, 373 КБ
Дополнительная информация
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