CMLDM8005 TR PBFREE

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5356 шт., срок 7-9 недель

230 руб.

от 10 шт. — 190 руб.

от 100 шт. — 122 руб.

от 500 шт. — 92.10 руб.

Добавить в корзину 1 шт. на сумму 230 руб.

Альтернативные предложения1

Номенклатурный номер: 8007259242

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Arrays

Mosfet Array 2 P-Channel (Dual) 20 В, 650 мА, 350 мВт, поверхностный монтаж SOT-563

Current - Continuous Drain (Id) @ 25В°C	650mA
Drain to Source Voltage (Vdss)	20V
ECCN	EAR99
FET Feature	Logic Level Gate
FET Type	2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	1.2nC @ 4.5V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 16V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-563, SOT-666
Power - Max	350mW
Rds On (Max) @ Id, Vgs	360mOhm @ 350mA, 4.5V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Simulation Models	http://www.centralsemi.com/docs/csm/CMLDM8005.LIB
Supplier Device Package	SOT-563
Vgs(th) (Max) @ Id	1V @ 250ВµA
Brand:	Central Semiconductor
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	650 mA
Manufacturer:	Central Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Pd - Power Dissipation:	350 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	1.2 nC
Rds On - Drain-Source Resistance:	360 mOhms
Series:	CMxxDM
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Вес, г	78