FGH60T65SQD-F155
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Описание
Электроэлемент
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
Технические параметры
| Current - Collector (Ic) (Max) | 120A |
| Current - Collector Pulsed (Icm) | 240A |
| Gate Charge | 79nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Manufacturer | ON Semiconductor |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Part Status | Active |
| Power - Max | 333W |
| Reverse Recovery Time (trr) | 34.6ns |
| Series | - |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 227ВµJ(on), 100ВµJ(off) |
| Td (on/off) @ 25В°C | 20.8ns/102ns |
| Test Condition | 400V, 15A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 60A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Channel Type | P |
| Energy Rating | 50mJ |
| Gate Capacitance | 3813pF |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 60 A |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 333 W |
| Minimum Operating Temperature | -55 °C |
| Number of Transistors | 1 |
| Package Type | TO-247 G03 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Brand: | onsemi |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 120 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 333 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 120 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 333 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| PCB changed | 3 |
| PPAP | No |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Tab | Tab |
| Typical Collector Emitter Saturation Voltage (V) | 1.6 |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 151 КБ
Datasheet
pdf, 316 КБ
Datasheet
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Datasheet
pdf, 782 КБ
Datasheet FGH60T65SQD-F155
pdf, 870 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
